Transaction stack for electronic devices including non volatile memory with limited amount of writing cycles

摘要

The invention relates to a transaction stack 2 for devices with limited writing cycle memory, said transaction stack 2 sliding inside a transaction buffer 1. Following any Commit Transaction or alternatively Begin Transaction the transaction stack 2 is reallocated inside the transaction buffer 1 and consequently some memory locations inside the transaction buffer 1 are released. The writing access to the non volatile area memory of the transaction buffer 1 are not concentrated in the first address, as in standard implementation of a transaction stack, but they are spread over all the locations of the transaction buffer 1.