SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

A field effect transistor for nonvolatile memory holding use and a field effect transistor for logical operation use are manufactured in a same structure on a same semiconductor substrate without separately providing manufacturing processes for the field effect transistors for the two uses. Both of a memory circuit and a logic circuit of a semiconductor integrated circuit are composed of n and p channel field effect transistors including a memory holding material in a gate insulating structure (12). A logical operation status, a memory writing status and a nonvolatile memory holding status are electrically switched by controlling the level and applying timing of a voltage to be applied between a gate and a substrate region of the n and p channel field effect transistors including the memory holding material in the gate insulating structure.