| 摘要 |
PROBLEM TO BE SOLVED: To provide an SOI type semiconductor device which has a small chip size, and is attempted to enhance a reliability by capturing in a gettering region a heavy metal existing in an element formation region. SOLUTION: The semiconductor device comprises an SOI substrate 50 containing a semiconductor layer 3 formed on an insulating film 2, and a semiconductor element 60 formed on the semiconductor layer 3. The semiconductor element 60 is formed in an element formation region 70 enclosed with a trench isolation groove 4 for isolating the semiconductor layer 3 in an island shape, and a gettering region 9 is formed at only a corner of a sidewall region 80 surrounding the element formation region 70 across the trench isolation groove 4. This can cause to materialize the SOI type semiconductor device which can suppress an increase in the chip size, while suppressing a characteristic failure and enhancing a reliability. COPYRIGHT: (C)2007,JPO&INPIT
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