SEMICONDUCTOR DEVICE AND ITS FABRICATION PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device in which ON resistance can be reduced effectively while employing an SiC semiconductor, and to provide its fabrication process. SOLUTION: A plurality of P type wells 23 are formed in an N type SiC semiconductor substrate 20 while spaced apart from each other. An N+type source layer 26 is formed in the inner region of the P type well 23. A gate electrode 25 is formed on the semiconductor substrate 20 to extend over an adjacent P type well 23 while holding the gate insulating film 24 between. An N type impurity diffusion layer 41 is formed in a region between adjacent P type wells 23. COPYRIGHT: (C)2007,JPO&INPIT