| 摘要 |
PROBLEM TO BE SOLVED: To dissolve metal contamination in an SOI layer relating to a manufacturing method of an SOI substrate. SOLUTION: An amorphous silicon layer 14 and a metal layer 18 are formed in the order on an oxide film 13 formed on the surface of a silicon substrate 12, the amorphous silicon layer 14 is changed to the SOI layer 16 composed of single crystal silicon by performing heat treatment at a prescribed temperature, the metal layer 18 is etched and removed thereafter, and the SOI substrate 11 is obtained for which the SOI layer 16 is formed on the silicon substrate 12 through the oxide film 13. The manufacturing method includes a process of forming a gettering layer 19 in the SOI layer 16 surfaced by etching and removing the metal layer 18, and gettering a metal in the SOI layer 16; and a process of removing the gettering layer 19, and making the SOI layer 16 from which the metal is removed surface. It is preferable that the metal layer 18 is nickel vapor-deposited on the amorphous silicon layer 14, and the gettering layer 19 is a polysilicon layer formed by a CVD method. COPYRIGHT: (C)2007,JPO&INPIT
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