| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device that can suppress formation of bumps without increasing the number of manufacturing processes. SOLUTION: STI 60 is formed on a semiconductor substrate 10 first to enclose element formation regions D1 to D4 respectively (element separation region forming process). Then resist R3 having the element formation region D1 opened is used as a mask to inject boron into the entire surface of the element formation region D1 to adjust the threshold voltage of an FET 20. Consequently, an impurity-injection layer 26 is formed as the top surface of the semiconductor substrate 10 in the element formation region D1 (first impurity injecting process). At this time, boron is injected even into a peripheral edge of the element formation region D2 (second impurity injecting process) simultaneously with the injection for threshold voltage adjustment of the FET 20. Namely, the first and second impurity injecting processes are carried out as the same process. COPYRIGHT: (C)2007,JPO&INPIT
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