| 摘要 |
PROBLEM TO BE SOLVED: To provide a fabrication process of a semiconductor device in which formation of a recess in the periphery of the surface of an isolation film buried in a semiconductor substrate is controlled. SOLUTION: A trench 1a is formed by etching a semiconductor substrate 1 using mask films 12 and 13 having an opening 13a formed on the semiconductor substrate 1 as a mask. A first insulating film is formed on the mask film 13, in the opening 13a, and in the trench 1a. The first insulating film is then removed from above the mask film 13 and the first insulating film 14 located in the opening 13a is removed furthermore before filling the trench 1a with an isolation film 2. A second insulating film 15 is formed on the first insulating film 14 located in the trench 1a and then etched back thus forming a periphery coating film 2a on the periphery of the first insulating film 14 located in the trench 1a. COPYRIGHT: (C)2007,JPO&INPIT
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