| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can precisely and effectively form a pattern. SOLUTION: The method of manufacturing a semiconductor device includes a step to form first master patterns (21a and 21b) on base areas (13, 15 and 16), a step to form a plurality of dummy line patterns (21c) on the base areas at a first pitch, a step to form second mask patterns (25c) which are formed on both long side surfaces of the dummy line pattern and have a specified mask section, a step to remove the dummy line pattern, and a step to etch the base areas using the first mask pattern and the specified mask section as a mask. COPYRIGHT: (C)2007,JPO&INPIT
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