发明名称 |
Field effect transistor with mixed-crystal-orientation channel and source/drain regions |
摘要 |
Hybrid orientation substrates allow the fabrication of complementary metal oxide semiconductor (CMOS) circuits in which the n-type field effect transistors (nFETs) are disposed in a semiconductor orientation which is optimal for electron mobility and the p-type field effect transistors (pFETs) are disposed in a semiconductor orientation which is optimal for hole mobility. This invention discloses that the performance advantages of FETs formed entirely in the optimal semiconductor orientation may be achieved by only requiring that the device's channel be disposed in a semiconductor with the optimal orientation. A variety of new FET structures are described, all with the characteristic that at least some part of the FET's channel has a different orientation than at least some part of the FET's source and/or drain. Hybrid substrates into which these new FETs might be incorporated are described along with their methods of making.
|
申请公布号 |
US2006244068(A1) |
申请公布日期 |
2006.11.02 |
申请号 |
US20050116053 |
申请日期 |
2005.04.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DESOUZA JOEL P.;SADANA DEVENDRA K.;SAENGER KATHERINE L.;SUNG CHUN-YUNG;YANG MIN;YIN HAIZHOU |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|