Electron beam exposure apparatus, electron beam exposure method and method of manufacturing semiconductor device

摘要

An electron beam exposure apparatus has a first shaping aperture having a plurality of rectangular openings, each having sizes different from each other and shaping a beam shape of an electron beam, a rectangular opening selection deflector which controls a path of the electron beam to irradiate the electron beam on one of the plurality of rectangular openings, a second shaping aperture having a plurality of character openings, each having sizes different from each other and shaping a beam shape of the electron beam passing through the first shaping aperture, and a character beam deflector which controls the path of the electron beam to irradiate the electron beam on character openings corresponding to the rectangular openings in the first shaping aperture.