Semiconductor memory and method for accessing semiconductor memory

摘要

A semiconductor memory provided with ferroelectric layers, comprising; memory cells (Q1,Q2) each comprising a ferroelectric memory FET having a ferroelectric layer between a gate electrode and a semiconductor layer, buffer cells (20) capable of storing data transferred from the memory cells (Q1,Q2), and buffer circuits (30) for transferring the data in the memory cells (Q1,Q2) to the buffer cells (20) and further writing the transferred data again to the memory cells (Q1,Q2).