发明名称 PROCESSING METHOD BY USING FOCUSED ION BEAM AND FOCUSED ION BEAM PROCESSING APPARATUS
摘要 <p>A processing method and a processing apparatus using a focused ion beam by which a region to be processed can be appropriately processed even the region is smaller than an irradiation width of the focused ion beam. In the processing method by using the focused ion beam (I), deposition process or etching process is performed to a body (90) to be processed by irradiating the body with the focused ion beam. As a dose quantity of the focused ion beam is increased by irradiating an edge (E) of the body to be processed with the focused ion beam and controlling the dose quantity, the processing region gradually increases from the edge, and the deposition process or the etching process is performed to the body (90) to be processed.</p>
申请公布号 WO2006115090(A1) 申请公布日期 2006.11.02
申请号 WO2006JP307987 申请日期 2006.04.17
申请人 SII NANOTECHNOLOGY INC.;KOZAKAI, TOMOKAZU 发明人 KOZAKAI, TOMOKAZU
分类号 H01J37/30;G03F1/72;G03F1/74;H01J37/305;H01J37/317 主分类号 H01J37/30
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