AUTO-STOPPING ABRASIVE COMPOSITION FOR POLISHING HIGH STEP HEIGHT OXIDE LAYER

摘要

The present invention relates to a chemical - mechanical polishing composition which is employed in a process for chemical -mechanical polishing of silicon oxide layer having severe unevenness with large step-height in manufacturing technology of semiconductor device and a process for chemical -mechanical polishing using the same, which has auto- stopping function that the rate of polishing is much lowered after planarization by removing step-height, being characterized in that it comprises i) abrasive particles of metal oxide; and ii) at least one compound (s) selected from the group consisting of amino alcohols, hydroxycarboxylic acid having at least 3 of the total number of carboxylic acid group (s) and hydroxyl group (s) or their salts, or a mixture thereof . In the composition of the invention, a polymeric organic acid, a preservative, a lubricant and a surfactant may be further contained. The auto- stopping polishing composition according to the present invention provides effects of shortening the vapor -deposit ion time of a layer to be polished, saving the raw material to be vapor- deposited, shortening the chemical -mechanical polishing time, and saving the slurry employed. Thus, according to the present invention, the material cost is reduced and the process time is shortened, and increase of the process margin through the auto- stopping function of the polishing rate advantageously results in enhanced productivity.