METHOD FOR MANUFACTURING POLYSILICON RESISTOR

摘要

A method for fabricating a polysilicon resistor is provided to improve unstable sheet resistance caused by combination of a hydrogen atom and a trap at room temperature or a bias voltage by implanting nitrogen atoms into polysilicon so that the number of hydrogen traps in a grain boundary of the polysilicon is decreased. A well ion implantation process is performed on a substrate(10) to form a well region. An STI process is performed to form an isolation layer(11). A polysilicon layer(12) is deposited on the resultant structure and is etched in a manner that the polysilicon layer functioning as a resistor is formed on the isolation layer and a gate electrode of a transistor is formed on an active region. A high density junction region(13) is formed by a high density ion implantation process after a spacer process and an LDD(lightly doped drain) process are sequentially performed. An N2 implantation process(14) is performed to implant N2 atoms into the polysilicon layer so that a polysilicon resistor into which the N2 atoms are implanted is finished.