A SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device is provided to avoid defects of a capacitor by controlling a surface step of a lower electrode. An insulation layer(111) including a trench is formed on a substrate(110). A lower electrode(112a) of a capacitor is formed on the insulation layer along a step formed by the trench. A lower interconnection(113) made of copper is formed to bury the trench so that the lower electrode is connected to a first upper interconnection(124a). A dielectric layer(114) is formed on the lower electrode to overlap the insulation layer at one side of the trench. An upper electrode(115a) of the capacitor is formed on the dielectric layer. A first contact plug(123a) is formed on the upper electrode to connect the upper electrode with a second upper interconnection(124b). A second contact plug(123b) is formed on the lower interconnection to connect the lower interconnection with the first upper interconnection. The dielectric layer and the upper electrode partially overlap the lower interconnection.