发明名称 RESIST UNDERCOAT FILM MATERIAL, AND PATTERNNING METHOD USING SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist undercoat film material for a multilayer resist process, in particular, a two-layer resist process or a three-layer resist process, which has a function of neutralizing an amine-based contaminant from a substrate to reduce adverse influences such as trailing of a resist pattern in an overcoat resist, and to provide a method for forming a pattern on a substrate by using the material. <P>SOLUTION: The resist undercoat film material for the multilayer resist film to be used in lithography contains at least a polymer having a repeating unit expressed by general formula (1) as an acid generator. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006301145(A) 申请公布日期 2006.11.02
申请号 JP20050120636 申请日期 2005.04.19
申请人 SHIN ETSU CHEM CO LTD 发明人 HATAKEYAMA JUN;OSAWA YOICHI
分类号 G03F7/11;C08F214/26;C08F216/14;G03F7/26;H01L21/027 主分类号 G03F7/11
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