发明名称 High density stepped, non-planar flash memory
摘要 A first plurality of memory cells is in a first plane in a first column of the array. A second plurality of memory cells is in a second plane in the same column. The second plurality of memory cells are coupled to the first plurality of memory cells through a series connection of their source/drain regions.
申请公布号 US2006245255(A1) 申请公布日期 2006.11.02
申请号 US20060472617 申请日期 2006.06.22
申请人 MICRON TECHNOLOGY, INC. 发明人 FORBES LEONARD;AHN KIE Y.
分类号 G11C16/04 主分类号 G11C16/04
代理机构 代理人
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