发明名称 |
High density stepped, non-planar flash memory |
摘要 |
A first plurality of memory cells is in a first plane in a first column of the array. A second plurality of memory cells is in a second plane in the same column. The second plurality of memory cells are coupled to the first plurality of memory cells through a series connection of their source/drain regions.
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申请公布号 |
US2006245255(A1) |
申请公布日期 |
2006.11.02 |
申请号 |
US20060472617 |
申请日期 |
2006.06.22 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
FORBES LEONARD;AHN KIE Y. |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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