发明名称 Semiconductor memory device
摘要 The present invention provides a semiconductor memory device for reducing a power consumption and securing an enough valid data window. A semiconductor memory device includes an align control signal generation unit for generating a plurality of align control signals sequentially activated by dividing a data strobe signal only when a data input/output is performed; and a data align unit for outputting a plurality of data which are sequentially inputted as a plurality of align data at the same time in response to the plurality of align control signals.
申请公布号 US2006245278(A1) 申请公布日期 2006.11.02
申请号 US20050322948 申请日期 2005.12.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE CHANG-HYUK;CHOI BYOUNG-JIN
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
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