发明名称 |
METHOD OF FABRICATING A SIGE SEMICONDUCTOR STRUCTURE |
摘要 |
<p>A method of fabricating an integrated circuit includes providing a substrate and creating base-windows in a layer. The method also includes forming a monocrystalline SiGe base layer in each of the base layers, and polycrystalline SiGe elsewhere. Additionally, the method also includes forming a monocrystalline silicon layer over selectively exposed portions of the surface of the substrate. The integrated circuit beneficially includes silicon-based elements such as a lateral pnp transistor, a varactor, and a polysilicon transistor, which are formed on a common substrate with an npn SiGe bipolar transistor.</p> |
申请公布号 |
EP1716598(A1) |
申请公布日期 |
2006.11.02 |
申请号 |
EP20040770316 |
申请日期 |
2004.10.24 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
DEIXLER, PETER;WROBLEWSKI, BRIAN;COLCLASER, ROY |
分类号 |
H01L29/737;H01L21/331;H01L21/8249;H01L27/06 |
主分类号 |
H01L29/737 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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