| 摘要 |
A semiconductor device includes a first semiconductor chip ( 5 ) having a first terminal ( 7 ) on one surface, a second semiconductor chip ( 1 a) which is larger than the first semiconductor chip ( 5 ) and on which the first semiconductor chip ( 5 ) is stacked and which has a second terminal ( 3 ) on one surface, an insulating layer ( 10 ) formed on a second semiconductor chip ( 1 a) to cover the first semiconductor chip ( 5 ), a plurality of holes ( 10 a) formed in the insulating layer ( 10 ) on at least a peripheral area of the first semiconductor chip ( 5 ), a via ( 11 a) formed like a film on inner peripheral surfaces and bottom surfaces of the holes ( 10 a) and connected electrically to the second terminal ( 3 ) of the second semiconductor chip ( 1 a), a wiring pattern ( 11 b) formed on an upper surface of the insulating layer ( 10 ), and an external terminal ( 14 ) formed on the wiring pattern ( 11 b).
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