SEMICONDUCTOR DIE EDGE RECONDITIONING

摘要

An integrated circuit (10) has a semiconductor substrate (12) and an interconnect layer (14) that mechanically relatively weak and susceptible to cracks and delamination. In the formation of the integrated circuit from a semiconductor wafer, a cut (26) is made through the interconnect layer (14) to form an edge of the interconnect layer. This cut may continue completely through the wafer thickness or stop short of doing so. In either case, after cutting through the interconnect layer, a reconditioning layer (30) is formed on the edge of the interconnect layer. This reconditioning layer seals the existing cracks and delaminations and inhibits the further delamination or cracking of the interconnect layer. The sealing layer may be formed, for example, before the cut through the wafer, after the cut through the wafer but before any packaging, or after performing wirebonding between the interconnect layer and an integrated circuit package.