COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION FOR FORMING PHOTOCROSSLINKING CURED RESIST UNDERLAYER FILM

摘要

This invention provides an underlayer film, which is used as a layer underlying a photoresist in a lithographic process in semiconductor device production, has a higher dry etching process than the photoresist, does not cause intermixing with the photoresist, and can flatten the surface of a semiconductor substrate having holes with a high aspect ratio. There is also provided a composition for resist underlayer film formation for forming the underlayer film. The composition is adapted for the formation of an underlayer film for use as a layer underlying a photoresist by photoirradiation and contains a polymerizable material and a photopolymerization initiator.