发明名称 TILTED PLASMA DOPING
摘要 <p>A plasma doping apparatus (100) includes a chamber (104) and a plasma source (162) that generates ions in the chamber from a dopant gas. A grating (154) is positioned in the chamber. A platen (148) for supporting a target (150) is positioned in the chamber. At least one of the grating and the target are oriented so that dopant ions extracted from the grating impact the target at a non- normal angle of incidence.</p>
申请公布号 WO2006116459(A1) 申请公布日期 2006.11.02
申请号 WO2006US15736 申请日期 2006.04.25
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人
分类号 H01J37/32 主分类号 H01J37/32
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