NON VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A nonvolatile memory device and a manufacturing method thereof are provided to improve the reliability and characteristics of device by preventing the generation of hump and the increase of leakage current due to a parasitic SONOS(Silicon Oxide Nitride Oxide Silicon) transistor. An active region of a semiconductor substrate(210) is defined by a first isolation layer. A gate is formed on the substrate. A first threshold voltage controlling layer(222) is formed under the gate on an upper surface of the active region. A second threshold voltage controlling layer(224) is formed at a corner portion of the first isolation layer. An insulating layer is formed at a predetermined portion between the gate and the substrate.