| 摘要 |
<p>A method for fabricating a semiconductor device is provided to prevent an active region from being attacked by avoiding etch loss of polysilicon while sufficiently increasing an etch target of silicide. A gate oxide layer(25) is formed on a silicon substrate(21). Polysilicon(26), silicide(27) and a hard mask nitride layer(28) are sequentially stacked on the gate oxide layer. The hard mask nitride layer is selectively patterned. The silicide is etched by using the patterned hard mask nitride layer as an etch barrier until the polysilicon is opened wherein a negative profile of an undercut type is formed on an etched section. The polysilicon is etched by using the hard mask nitride layer as an etch barrier to form a gate line. A gate re-oxidation process is performed to oxidize the polysilicon and an exposed lateral surface of the silicide.</p> |
