| 摘要 |
<p>An OTFT(organic thin film transistor) is provided to avoid a leakage current caused by accumulation of carriers while an organic semiconductor layer is formed to separate channel regions of adjacent thin film transistors by a simple process by forming an organic semiconductor layer by a CMP process while using a channel separation layer as a polishing stop layer. A source/drain electrode(121) is formed on a substrate(110). A channel separation layer(120) is formed on the substrate, including an opening part. A semiconductor layer(135) is formed in the opening part of the channel separation layer, coming in contact with the source/drain electrode. A gate(150) is formed on the substrate. A gate insulation layer(140) is formed between the source/drain electrode and the gate. The semiconductor layer includes an organic semiconductor layer.</p> |
