| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser diode having an embedded layer whose heat dissipation efficiency is high and whose growing state of single crystal is satisfactory, and to provide a manufacturing method of the semiconductor laser diode. <P>SOLUTION: The semiconductor laser diode is provided with a first clad layer, an active layer formed on the first clad layer, a second clad layer which is formed on the active layer and in which a stripe-like ridge is formed on an upper part, and the embedded layer which grows at the upper part of the second clad layer from which an upper face of the ridge is removed and which is formed of AlGaInN. A manufacturing method of the semiconductor laser diode is also disclosed. <P>COPYRIGHT: (C)2007,JPO&INPIT |
