发明名称 MANUFACTURING METHOD AND MANUFACTURING DEVICE OF SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor element for forming an oxide layer as a constitutional element of a semiconductor element accurately, and to provide the semiconductor element and a manufacturing device thereof. SOLUTION: The manufacturing method of the semiconductor element includes an oxidation step for forming an oxide layer on a wafer 1 (semiconductor substrate) by using an oxide gas. The oxidation step is separated into two or more oxidation steps for one wafer 1. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006303415(A) 申请公布日期 2006.11.02
申请号 JP20050290785 申请日期 2005.10.04
申请人 SEIKO EPSON CORP 发明人 NAKAWA TOMOFUMI;KANEKO TAKESHI;SATO JUNJI;IWAI HIKARI
分类号 H01S5/183;H01L21/316;H01S5/042 主分类号 H01S5/183
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