发明名称 |
MANUFACTURING METHOD AND MANUFACTURING DEVICE OF SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor element for forming an oxide layer as a constitutional element of a semiconductor element accurately, and to provide the semiconductor element and a manufacturing device thereof. SOLUTION: The manufacturing method of the semiconductor element includes an oxidation step for forming an oxide layer on a wafer 1 (semiconductor substrate) by using an oxide gas. The oxidation step is separated into two or more oxidation steps for one wafer 1. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2006303415(A) |
申请公布日期 |
2006.11.02 |
申请号 |
JP20050290785 |
申请日期 |
2005.10.04 |
申请人 |
SEIKO EPSON CORP |
发明人 |
NAKAWA TOMOFUMI;KANEKO TAKESHI;SATO JUNJI;IWAI HIKARI |
分类号 |
H01S5/183;H01L21/316;H01S5/042 |
主分类号 |
H01S5/183 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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