| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor apparatus capable of accelerating a switching speed by reducing a collector-gate capacitance Cgc, while raising a breakdown voltage. SOLUTION: A power semiconductor apparatus 1 is equipped with an n-type base layer 2; a p-type base layer 3 selectively provided on this n-type base layer 2; an insulating layer 4 provided in a dummy region on this n-type base layer 2; a gate insulating film 6 provided at an inside of a trench 10; an n-type source layer 5 which is selectively provided on the p-type base layer 3 front surface in contact with this gate insulating film 6; a gate electrode 7 which is provided in this trench 10 and is insulated from the n-type base layer 2, the p-type base layer 3, and the n-type source layer 5 by the gate insulating film 6; an emitter electrode 8 electrically connected with the n-type source layer 5 and the p-type base layer 3; and a floating layer 9 provided at a bottom of the insulating layer 4. COPYRIGHT: (C)2007,JPO&INPIT
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