发明名称 ORGANIC LIGHT-EMITTING DISPLAY WITH SINGLE CRYSTALLINE SILICON THIN-FILM TRANSISTOR, AND METHOD OF FABRICATING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide an organic light-emitting display of a single crystalline silicon thin-film transistor, and to provide a method of fabricating the same. SOLUTION: The organic light-emitting display is provided, where a semiconductor circuit unit of 2T-1C structure, including a switching transistor and a drive transistor formed of single crystalline silicon is formed on a plastic substrate. The method of manufacturing the single-crystal silicon includes forming a single crystalline silicon layer and a buffer layer on a crystal grown plate, and then forming a partition layer at a predetermined depth in the single-crystal silicon layer, by implanting hydrogen ions from an upper portion of an insulating layer. The single-crystal silicon layer is stuck to the substrate. The partition layer is divided by heat energy applied to the outside. Consequently, the single-crystal silicon film can be formed on the substrate into a designated thickness. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006301629(A) 申请公布日期 2006.11.02
申请号 JP20060111209 申请日期 2006.04.13
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 NOGUCHI TAKASHI;XIANYU WENXU;YIN HUAXIANG
分类号 G09F9/30;H01L21/02;H01L21/336;H01L27/12;H01L27/32;H01L29/786;H01L51/50;H05B33/02;H05B33/10 主分类号 G09F9/30
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