| 摘要 |
A group III-V compound semiconductor comprising a single quantum well structure which has two barrier layers and a quantum well layer represented by the formula: In<SUB>x</SUB>Ga<SUB>y</SUB>Al<SUB>z</SUB>N (wherein x+y+z=1, 0<x<1, 0<y<1, and 0>=z <1) between the barrier layers, wherein a multiple quantum well structure having repeatedly the barrier layers and the quantum well layer is formed, a ratio of an average mole fraction of InN in the multiple quantum well layer, which is measured by x-ray diffraction, to a mole fraction of InN calculated from a wavelength of light emitted from the group III-V compound semiconductor due to current injection is not more than 42.5%.
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