Wire bonded semiconductor device having low inductance and noise

摘要

A semiconductor device has a semiconductor chip with a periphery and an IC organized in a core portion and a peripheral portion. The IC has a top level of interconnecting metal traces ( 510 ) from the peripheral portion to the core portion; the traces are covered by an insulating overcoat ( 520 ) which has peripheral windows to expose bond pads. The circuit further has at least one level of metal lines ( 511 ) on top of the insulating overcoat; the lines lead from the chip periphery towards the chip core, wherein each line ( 511 ) is substantially parallel to one of the traces ( 510 ) underneath the insulating overcoat and vertically aligned therewith. After assembling the chip onto a leadframe with segments ( 504 ), bonding wires ( 502 ) connect the bond pads ( 510 a) and the metal lines ( 511 a) with the segments.