发明名称 |
Nonvolatile memory device and method of forming same |
摘要 |
In a method of forming a silicon-oxide-nitride-oxide-silicon (SONOS) type nonvolatile memory device, a plurality of first gates may be formed on a semiconductor substrate. A plurality of charge storage spacers may be formed on the plurality of first gates so that a given charge storage spacer may be disposed on a sidewall of a given first gate. A plurality of second gates may be disposed on the plurality of first gates so that a given second gate is on a sidewall of a given first gate and covers a given charge storage spacer.
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申请公布号 |
US2006244014(A1) |
申请公布日期 |
2006.11.02 |
申请号 |
US20060476006 |
申请日期 |
2006.06.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI YONG-SUK |
分类号 |
H01L21/8247;H01L29/76;H01L21/8246;H01L27/115;H01L29/745;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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