| 摘要 |
An extreme ultraviolet ray exposure device and an extreme ultraviolet light source device are provided to selectively extract an EUV(Extreme UltraViolet) ray with a wavelength of 13.5nm by using a spatial wavelength distribution property of light irradiated from the extreme ultraviolet light source device. A heating/excitation unit heats a source material and generates plasma having a high density/high temperature region irradiating an EUV ray. An optical focusing unit focuses the light, which is irradiated from the plasma made of the EUV ray and other rays. The plasma has a spatial wavelength distribution. An EUV light source device(10) includes an optical extractor, which extracts the focused light. A pattern is formed on a mask(25). An illumination system(24) includes at least one optical element and projects the light, which contains the light extracted from the optical extractor, to the mask. A projection optical system(26) focuses the light from the mask on a work. A light blocking unit is installed between the optical focusing unit and the optical element of the illumination system.
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