| 摘要 |
A semiconductor device with a step gate is provided to avoid a slope phenomenon of a step gate by shifting a step gate to a portion over an isolation layer such that the step gate is defined as a wave type. An isolation layer and an active region are formed in a predetermined region of a semiconductor substrate. The active region has a first area(23a) with a high step and a second area(23b) with a low step by a recess(27). A step gate is formed on the first and second areas, vertically crossing the active region. A part(SG1) of the step gate passing through a portion over the active region is of a line type, and a part(SG2) of the step gate passing through a portion over the isolation layer is of a wave type that doesn't overlap the edge of an adjacent active region. A polysilicon layer, a silicide layer and a gate hard mask are sequentially stacked in the step gate.
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