发明名称 METHOD FOR CLEANING WAFER
摘要 A method for cleaning a wafer is provided to completely remove a water mark remaining on the surface of a wafer by additionally installing an IPA(isopropyl alcohol) cleaning bath with an IPA solution between a DIW(deionized water) rinse bath and a dry bath. A wafer(150) is cleaned by using HF. A cleaning process is performed on the wafer by using a DIW solution. The wafer is dipped into an IPA solution(115) for a predetermined interval of time. A material remaining on the surface of the wafer is removed by a dry method using IPA gas(175). The wafer can be dipped into the IPA solution for 5~10 minutes.
申请公布号 KR20060113095(A) 申请公布日期 2006.11.02
申请号 KR20050035969 申请日期 2005.04.29
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 LEE, KWANG HO
分类号 H01L21/304 主分类号 H01L21/304
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