发明名称 |
METHOD FOR CLEANING WAFER |
摘要 |
A method for cleaning a wafer is provided to completely remove a water mark remaining on the surface of a wafer by additionally installing an IPA(isopropyl alcohol) cleaning bath with an IPA solution between a DIW(deionized water) rinse bath and a dry bath. A wafer(150) is cleaned by using HF. A cleaning process is performed on the wafer by using a DIW solution. The wafer is dipped into an IPA solution(115) for a predetermined interval of time. A material remaining on the surface of the wafer is removed by a dry method using IPA gas(175). The wafer can be dipped into the IPA solution for 5~10 minutes.
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申请公布号 |
KR20060113095(A) |
申请公布日期 |
2006.11.02 |
申请号 |
KR20050035969 |
申请日期 |
2005.04.29 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
LEE, KWANG HO |
分类号 |
H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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