| 摘要 |
A memory device including a silicon nano dot doped with metal impurities is provided to operate a memory device at a low voltage and at a high speed by remarkably reducing a phenomenon that electrons or holes leak from a nano dot. A silicon nano dot(3) is deposited on a gate oxide layer formed in a transistor. An insulator thin film is formed on the surface of the deposited nano dot. The nano dot contains metal impurity, having a diameter of 1~20 nanometers. The metal impurity is at least one material selected from a group composed of Fe, Au, Ni, Co, Zn, Cu, Mn and Pt. An insulation material is filled in voids between the silicon nano dots.
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