| 摘要 |
<P>PROBLEM TO BE SOLVED: To correctly read information stored in memory cells without being affected by a change in wiring resistance due to positions of the memory cells. <P>SOLUTION: A memory device comprises a memory cell array 1 in which the resistance change type memory cells M are arranged in a matrix, word lines W<SB>1</SB>to W<SB>m</SB>, bit lines B<SB>1</SB>to B<SB>n</SB>, plate electrode lines P<SB>1</SB>to P<SB>n</SB>, and a transistor T. In the memory device, the bit lines B<SB>1</SB>to B<SB>n</SB>and the plate electrode lines P<SB>1</SB>to P<SB>n</SB>are both disposed in a row direction, and resistance values between both ends of the bit lines B<SB>1</SB>to B<SB>n</SB>and resistance values between both ends of the plate electrode lines P<SB>1</SB>to P<SB>n</SB>are made same. <P>COPYRIGHT: (C)2007,JPO&INPIT |
