RESISTANCE MEMORY CELL, METHOD FOR FORMING SAME AND ARRANGEMENT THEREOF USING SAME METHOD

摘要

PROBLEM TO BE SOLVED: To provide a resistance memory cell, a method for forming the resistance memory cell, and an arrangement of the resistance memory cell by using the method.

SOLUTION: There are provided a resistance memory cell whose memory device is made of photoimageable switchable material reversibly switchable between distinguishable conditions of resistances patterned by actinic irradiation, and a method for forming the same. Since the photoimageable switchable material can be patterned directly by the actinic irradiation, the resistance memory cell can be manufactured through a simple process.

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