| 摘要 |
PROBLEM TO BE SOLVED: To provide a film-forming apparatus for stably forming a uniform thin film on the surface of a substrate by using a CVD film-forming technique, and to provide a film-forming method therefor. SOLUTION: A chamber 3 has a film-forming chamber 8, a first exhaust chamber 9 and a second exhaust chamber 11 arranged therein, which are separated from each other by barrier plates 5 and 7; and also has the first substrate transfer chamber 15 for sending a substrate 16 to the film-forming chamber 8 and the second substrate transfer chamber 19 for collecting the substrate 16 after having been film-formed, placed therein. The substrate 16 is film-formed in a linear free span section in the film-forming chamber 8. The film-forming chamber 8 has gas supply sections 21 and electrode units 27 installed so as to form a film on both sides of the substrate 16. The gas supply sections 21 spout a film-forming gas to both sides of the top and bottom of the substrate 16. The electrode units 27 have electrodes 55 installed on both sides of the top and bottom of the substrate. A power source 29 supplies an electric power to the electrode units 27 to generate plasma 28 and form the thin film on both sides of the substrate 16. COPYRIGHT: (C)2007,JPO&INPIT
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