发明名称 |
Semiconductor device including multi-layered interconnection and method of manufacturing the device |
摘要 |
The semiconductor device includes a semiconductor substrate, and a multi-layer wiring portion including insulating layers and wiring layers alternately stacked one on another on a main surface of the semiconductor substrate. All of the wiring layers are made of a same basis metal, at least one of the wiring layers contains an additive element, and a concentration of the additive element is lower on an upper layer side than that on a lower layer side.
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申请公布号 |
US2006244144(A1) |
申请公布日期 |
2006.11.02 |
申请号 |
US20050250530 |
申请日期 |
2005.10.17 |
申请人 |
YAMADA MASAKI;SHIBATA HIDEKI |
发明人 |
YAMADA MASAKI;SHIBATA HIDEKI |
分类号 |
H01L21/768;H01L23/52;H01L21/3205;H01L21/822;H01L23/48;H01L23/532;H01L27/04 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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