发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
According to an aspect of the present invention, there is provided a semiconductor device comprising a semiconductor substrate, a capacitor which is disposed above the semiconductor substrate and in which a dielectric film is held between lower and upper electrodes, an oxide film formed in such a manner as to coat the capacitor and having a thickness of 5 nm or more and 50 nm or less, and a protective film formed on the oxide film by an ALD process.
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申请公布号 |
US2006244022(A1) |
申请公布日期 |
2006.11.02 |
申请号 |
US20050170316 |
申请日期 |
2005.06.30 |
申请人 |
KABUSHIKI KAISHA TOSHIBA. |
发明人 |
NATORI KATSUAKI;KANAYA HIROYUKI;YAMAKAWA KOJI |
分类号 |
H01L29/00;H01L21/473;H01L27/108 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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