| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent oxidation of a metal nitride film on the occasion of plasma ashing of photoresist embedded into the groove via the metal nitride film. <P>SOLUTION: The method of manufacturing semiconductor apparatus comprises the steps of forming an SiO<SB>2</SB>film 28 to the principal surface of a semiconductor substrate, forming a cylinder hole 29 to the SiO<SB>2</SB>film 28, forming a TiN film (30) to the entire surface of the cylinder hole 29 including the bottom surface and side surface, embedding the photoresist on the TiN film (30) within the cylinder hole 29, removing the TiN film (30) on the SiO<SB>2</SB>film 28, and removing the photoresit embedded into the cylinder hole 29 with the ashing process using the plasma of non-hydrogen system gas not including oxygen. <P>COPYRIGHT: (C)2007,JPO&INPIT |
