| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium nitride-based compound semiconductor element. <P>SOLUTION: The gallium nitride-based compound semiconductor element includes a substrate of Al<SB>x</SB>In<SB>y</SB>Ga<SB>1-x-y</SB>N substrate (11) having its surface inclination, which is larger than 0° and smaller than 1° in a prescribed direction with respect to a <0001> face, where (0≤x≤1, 0≤y≤1, and 0≤x+y≤1), and a gallium nitride system compound semiconductor layer (20) grown on the surface of the substrate (11). <P>COPYRIGHT: (C)2007,JPO&INPIT |
