| 摘要 |
Disclosed herein is a solid-state imaging device having an effective pixel portion, an optical black portion, and a charge transfer register portion commonly provided in the effective pixel portion and the optical black portion, wherein the area of a portion in the optical black portion corresponding to a unit sensor portion in the effective pixel portion is set smaller than the area of the unit sensor portion in the effective pixel portion. As a result, the distance between this portion corresponding to the unit sensor portion and the charge transfer register portion is increased. Accordingly, it is possible to reduce the influence of a coupling capacity between this portion corresponding to the unit sensor portion and the substrate upon the charge transfer register portion especially at the time of electronic shuttering, thereby suppressing variations in potential at the charge transfer register portion. Accordingly, the general dynamic range in the solid-stage imaging device can be increased. |
