发明名称 Semiconductor device and method of fabricating the same
摘要 A semiconductor device includes a semiconductor substrate having a source region and a drain region, a gate formed on the semiconductor substrate, a diode having a cathode region connected to the drain region, and a bit line connected to an anode region of the diode. The drain region and the cathode region are formed by a drain/cathode common region of an N-type semiconductor region.
申请公布号 US2006244019(A1) 申请公布日期 2006.11.02
申请号 US20060341932 申请日期 2006.01.26
申请人 发明人 SUGIZAKI MASAO;KABASHIMA KATSUHIKO;TANAKA TOSHIYUKI
分类号 H01L29/76 主分类号 H01L29/76
代理机构 代理人
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