| 摘要 |
A method for fabricating a semiconductor device is provided to avoid excessive loss of a STAR mask while maintaining high selectivity with respect to a lower material in a BARC(bottom anti-reflective coating) etch process by including a barrier layer of a hardened polymer component. An ARC is formed on a silicon substrate(21) having an isolation layer. A STAR(step gated asymmetry recess) mask is formed on the ARC. A barrier layer of a hardened polymer component is formed on the surface of the STAR mask by a plasma treatment process using gas for generating plenty of polymer as atmospheric gas. A first etch process is independently performed on the ARC by using the STAR mask and the barrier layer as an etch barrier. The silicon substrate exposed after the ARC is etched is etched by a predetermined depth to form a recess pattern(26) for increasing a channel length.
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