FABRICATION METHOD OF HALF-METALLIC FE3O4 THIN FILM

摘要

A method for fabricating a half metal Fe3O4 thin film is provided to fabricate the half metal Fe3O4 in a normal temperature and show reliable process repeatability. A substrate(13) and an Fe target(15) are mounted in a chamber(11). Gas in the chamber(11) is exhausted to the outside. Oxygen gas is supplied in the chamber(11) at a flow rate of 1.0 to 1.8 sccm, and a half metal Fe3O4 thin film is formed on the substrate(13). The substrate(13) is Si, SiO2, or glass.