| 摘要 |
A method for forming a metal contact hole of a semiconductor device is provided to prevent contact not-open and to obtain uniform contact bottom area by forming a deep metal contact having high aspect ratio using two-step etch processes. A bit line(33) having a hard mask is formed on a substrate(31) defined with cell and peripheral regions. A first insulating layer(36) is formed on the resultant structure. By etching the first insulating layer, a storage node contact hole is formed at the cell region and a first opening part is simultaneously formed to expose the bit line of the peripheral region. An SOG(Spin On Glass) layer is filled in the storage node contact hole and the first opening part. A second insulating layer(41a) is formed on the resultant structure. The second insulating layer in the cell region is selectively etched, and the exposed SOG layer is removed to form a storage node hole. A storage node(42) is formed in the storage node hole. A third insulating layer(44) is formed on the resultant structure. A second opening part is formed to expose the SOG layer filled in the first opening part by etching the third insulating layer in the peripheral region. The exposed SOG layer is removed.
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