| 摘要 |
A method for fabricating a semiconductor device is provided to efficiently increase the capacitance of a capacitor without increasing the area of the capacitor by forming unevenness on a lower electrode of the capacitor. A substrate having an insulation layer is prepared. A lower electrode(112) of a capacitor is deposited on the insulation layer. The lower electrode is etched to form unevenness on the lower electrode. A dielectric layer is formed on the lower electrode along a step formed by the unevenness, having a structure of an oxide layer/a nitride layer/an oxide layer. An upper electrode(117) of the capacitor is formed along a step of the upper part of the dielectric.
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